参数 | 参数值 |
EU RoHS
|
Compliant
|
Phototransistor Type
|
Phototransistor
|
Viewing Orientation
|
Top View
|
Polarity
|
NPN
|
Type
|
Chip
|
Half Intensity Angle Degrees (°)
|
24
|
Lens Shape Type
|
Domed
|
Minimum Operating Temperature (°C)
|
-40
|
Maximum Operating Temperature (°C)
|
100
|
Fabrication Technology
|
NPN Transistor
|
Peak Wavelength (nm)
|
860
|
Material
|
Silicon
|
Number of Channels per Chip
|
1
|
Maximum Collector Emitter Voltage (V)
|
35
|
Maximum Dark Current (nA)
|
200
|
Maximum Collector Current (mA)
|
15
|
Maximum Power Dissipation (mW)
|
165
|
Package Diameter (mm)
|
3.4(Max)
|
Mounting
|
Through Hole
|
Package Height (mm)
|
5.2(Max)
|
PCB changed
|
2
|
Standard Package Name
|
T-1
|
Supplier Package
|
T-1
|
Pin Count
|
2
|
Lead Shape
|
Through Hole
|